Deep sub-micron FD-SOI for front-end application

Deep sub-micron FD-SOI for front-end application

In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented. r 2007 Elsevier B.V. All rights reserved. PACS: 07....

The silico Deep sub - micron FD - SOI for front - end application

confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented.

A Fully Differential Front End Charge Sampling Amplifier for Medical Ultrasound Imaging in 28nm FD-SOI Technology

Optimising bandwidth over deep sub-micron interconnect

In deep sub-micron (DSM) circuits proper analysis of interconnect delay is very important. When relatively long wires are placed in parallel, it is essential to include the effects of cross-talk on delay. In a parallel wire structure, the exact spacing and size of the wires determine both the resistance and the distribution of the capacitance between the ground plane and the adjacent signal car...

Deep Sub-micron IDDQ Test Options

The defect-free IDDQ has two major components: (i) the reverse biased p-n junction leakage current, and (ii) the transistor sub-threshold leakage (off) current. The reverse biased p-n junction leakage current can be further divided into two segments: state dependent, and state independent. The state dependent component p-n junction leakage current depends on the reverse biasing of the p-n junct...